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TMU3N80G MOSFET Transistor

The TMU3N80G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMU3N80G transistor as follows.

Circuit diagram symbol of the TMU3N80G transistor

TMU3N80G Transistor Specification

Transistor Code TMU3N80G
Transistor Type MOSFET
Control Channel Type N-Channel
Package I-PAK
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.2Ohm
Power Dissipation (Maximum) PD 94W
Drain-Source Capacitance 65pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 36nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 19nC

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