TMP11N50 MOSFET Transistor

The TMP11N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMP11N50 transistor as follows.

TMP11N50 Transistor Specification

Transistor Code		TMP11N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.67Ohm
Power Dissipation (Maximum)	PD	158W
Drain-Source Capacitance		140pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		46nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		28nC

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