MDP9N60TH MOSFET Transistor

The MDP9N60TH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDP9N60TH transistor as follows.

MDP9N60TH Transistor Specification

Transistor Code		MDP9N60TH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		134pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		59nS
Gate-Threshold Voltage (Maximum)		5V

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