SUP25P10-138 MOSFET Transistor

The SUP25P10-138 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SUP25P10-138 transistor as follows.

SUP25P10-138 Transistor Specification

Transistor Code		SUP25P10-138
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.138Ohm
Power Dissipation (Maximum)	PD	73.5W
Drain-Source Capacitance		105pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		40nC

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