HY80N07T MOSFET Transistor

The HY80N07T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HY80N07T transistor as follows.

HY80N07T Transistor Specification

Transistor Code		HY80N07T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Transistor SMD Code		80N07T
Drain-Source Voltage (Maximum)	VDS	65V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0072Ohm
Power Dissipation (Maximum)	PD	96.7W
Drain-Source Capacitance		660pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		22.6nS
Gate-Threshold Voltage (Maximum)		4V

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