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STS8217 MOSFET Transistor

The STS8217 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STS8217 transistor as follows.

Circuit diagram symbol of the STS8217 transistor

STS8217 Transistor Specification

Transistor Code STS8217
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSOT26
Drain-Source Voltage (Maximum) VDS 24V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0165Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 188pF
Total Gate Charge 174nC

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