STS8212 MOSFET Transistor

The STS8212 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STS8212 transistor as follows.

STS8212 Transistor Specification

Transistor Code		STS8212
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOT26
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0135Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		164pF
Total Gate Charge		150nC

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