STP7NM50N MOSFET Transistor

The STP7NM50N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP7NM50N transistor as follows.

STP7NM50N Transistor Specification

Transistor Code		STP7NM50N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		P7NM50N
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.78Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		35pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		12nC

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