RU30100R MOSFET Transistor

The RU30100R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU30100R transistor as follows.

RU30100R Transistor Specification

Transistor Code		RU30100R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		580pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		24nS
Gate-Threshold Voltage (Maximum)		3V

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