STP16NS25 MOSFET Transistor

The STP16NS25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP16NS25 transistor as follows.

STP16NS25 Transistor Specification

Transistor Code		STP16NS25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.28Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		26nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		59nC

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