QM3006P MOSFET Transistor

The QM3006P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3006P transistor as follows.

QM3006P Transistor Specification

Transistor Code		QM3006P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	74W
Drain-Source Capacitance		267pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		20nC

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