STP10P6F6 MOSFET Transistor

The STP10P6F6 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP10P6F6 transistor as follows.

STP10P6F6 Transistor Specification

Transistor Code		STP10P6F6
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220
Transistor SMD Code		10P6F6
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.16Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		5.3nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		6.4nC

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