STP40N60M2 MOSFET Transistor

The STP40N60M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP40N60M2 transistor as follows.

STP40N60M2 Transistor Specification

Transistor Code		STP40N60M2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		40N60M2
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.088Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		117pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13.5nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		57nC

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