STI260N6F6 MOSFET Transistor

The STI260N6F6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STI260N6F6 transistor as follows.

STI260N6F6 Transistor Specification

Transistor Code		STI260N6F6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Transistor SMD Code		260N6F6
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.003Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		850pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		165nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		183nC

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