STF8NM60N MOSFET Transistor

The STF8NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STF8NM60N transistor as follows.

STF8NM60N Transistor Specification

Transistor Code		STF8NM60N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220FP
Transistor SMD Code		F8NM60N
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.65Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		37pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		19nC

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