SIHFI620G MOSFET Transistor

The SIHFI620G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFI620G transistor as follows.

SIHFI620G Transistor Specification

Transistor Code		SIHFI620G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220FP
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		14nC

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