STB120N10F4 MOSFET Transistor

The STB120N10F4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB120N10F4 transistor as follows.

STB120N10F4 Transistor Specification

Transistor Code		STB120N10F4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		120N10F4
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		568pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		116nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		131nC

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