SQJ960EP MOSFET Transistor

The SQJ960EP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQJ960EP transistor as follows.

SQJ960EP Transistor Specification

Transistor Code		SQJ960EP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWERPAK-SO-8L
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.036Ohm
Power Dissipation (Maximum)	PD	34W
Drain-Source Capacitance		114pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		13nC

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