SQJ858EP MOSFET Transistor

The SQJ858EP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQJ858EP transistor as follows.

SQJ858EP Transistor Specification

Transistor Code		SQJ858EP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWERPAK-SO-8L
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	68W
Drain-Source Capacitance		500pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		39nC

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