SML1001R1BN MOSFET Transistor

The SML1001R1BN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML1001R1BN transistor as follows.

SML1001R1BN Transistor Specification

Transistor Code		SML1001R1BN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	1000V
Drain Current (Maximum)	ID	10.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.1Ohm
Power Dissipation (Maximum)	PD	230W
Drain-Source Capacitance		2950pF
Operating Junction Temperature (Maximum)		150°C

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