IPW60R041C6 MOSFET Transistor

The IPW60R041C6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW60R041C6 transistor as follows.

IPW60R041C6 Transistor Specification

Transistor Code		IPW60R041C6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	77.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.041Ohm
Power Dissipation (Maximum)	PD	481W
Total Gate Charge		290nC

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