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SM6F03NSI MOSFET Transistor

The SM6F03NSI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM6F03NSI transistor as follows.

Circuit diagram symbol of the SM6F03NSI transistor

SM6F03NSI Transistor Specification

Transistor Code SM6F03NSI
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-126
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.4Ohm
Power Dissipation (Maximum) PD 12.5W
Drain-Source Capacitance 87pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10.8nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 10.2nC

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