The FQE10N20CTU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the FQE10N20CTU transistor as follows.
| Transistor Code | FQE10N20CTU | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | TO-126 | |
| Drain-Source Voltage (Maximum) | VDS | 200V |
| Gate-Source Voltage (Maximum) | VGS | 30V |
| Drain Current (Maximum) | ID | 4A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.36Ohm |
| Power Dissipation (Maximum) | PD | 12.8W |
| Drain-Source Capacitance | 97pF | |
| Operating Junction Temperature (Maximum) | 150°C | |
| Rise Time | 92nS | |
| Gate-Threshold Voltage (Maximum) | 4V | |
| Total Gate Charge | 20nC | |
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