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SIS2305PLT1G MOSFET Transistor

The SIS2305PLT1G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIS2305PLT1G transistor as follows.

Circuit diagram symbol of the SIS2305PLT1G transistor

SIS2305PLT1G Transistor Specification

Transistor Code SIS2305PLT1G
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT23
Transistor SMD Code A5*
Drain-Source Voltage (Maximum) VDS 8V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 3.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.044Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 375pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS

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