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SI2301BDS MOSFET Transistor

The SI2301BDS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2301BDS transistor as follows.

Circuit diagram symbol of the SI2301BDS transistor

SI2301BDS Transistor Specification

Transistor Code SI2301BDS
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT23
Transistor SMD Code L1*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 2.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.08Ohm
Power Dissipation (Maximum) PD 0.9W
Drain-Source Capacitance 95pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 0.95V

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