SIHLD120 MOSFET Transistor

The SIHLD120 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHLD120 transistor as follows.

SIHLD120 Transistor Specification

Transistor Code		SIHLD120
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HVMDIP
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	1.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		64nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		12nC

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