SIHFD120 MOSFET Transistor

The SIHFD120 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIHFD120 transistor as follows.

SIHFD120 Transistor Specification

Transistor Code		SIHFD120
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HVMDIP
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		16nC

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