SI7629DN MOSFET Transistor

The SI7629DN is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7629DN transistor as follows.

SI7629DN Transistor Specification

Transistor Code		SI7629DN
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWERPAK-1212-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	21.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0046Ohm
Power Dissipation (Maximum)	PD	3.7W
Drain-Source Capacitance		700pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		38nS
Gate-Threshold Voltage (Maximum)		1.5V

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