SI7120DN MOSFET Transistor

The SI7120DN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7120DN transistor as follows.

SI7120DN Transistor Specification

Transistor Code		SI7120DN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWERPAK-1212-8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.019Ohm
Power Dissipation (Maximum)	PD	1.5W
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		3.5V

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