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SI3442BDV MOSFET Transistor

The SI3442BDV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI3442BDV transistor as follows.

Circuit diagram symbol of the SI3442BDV transistor

SI3442BDV Transistor Specification

Transistor Code SI3442BDV
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSOP-6
Transistor SMD Code 2B*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.057Ohm
Power Dissipation (Maximum) PD 0.86W
Drain-Source Capacitance 75pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 50nS
Gate-Threshold Voltage (Maximum) 1.8V

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