NVGS5120P MOSFET Transistor

The NVGS5120P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVGS5120P transistor as follows.

NVGS5120P Transistor Specification

Transistor Code		NVGS5120P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP-6
Transistor SMD Code		VP6
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.111Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		72pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4.9nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		18.1nC

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