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NVGS5120P MOSFET Transistor

The NVGS5120P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NVGS5120P transistor as follows.

Circuit diagram symbol of the NVGS5120P transistor

NVGS5120P Transistor Specification

Transistor Code NVGS5120P
Transistor Type MOSFET
Control Channel Type P-Channel
Package TSOP-6
Transistor SMD Code VP6
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.111Ohm
Power Dissipation (Maximum) PD 1.1W
Drain-Source Capacitance 72pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 4.9nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 18.1nC

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