SI2304BDS MOSFET Transistor

The SI2304BDS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2304BDS transistor as follows.

SI2304BDS Transistor Specification

Transistor Code		SI2304BDS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23
Transistor SMD Code		L4
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	0.75W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12.5nS
Gate-Threshold Voltage (Maximum)		3V

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