SI1025X MOSFET Transistor

The SI1025X is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1025X transistor as follows.

SI1025X Transistor Specification

Transistor Code		SI1025X
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-89
Transistor SMD Code		D
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4Ohm
Power Dissipation (Maximum)	PD	0.25W
Drain-Source Capacitance		10pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V

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