SI1012X MOSFET Transistor

The SI1012X is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI1012X transistor as follows.

SI1012X Transistor Specification

Transistor Code		SI1012X
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-89
Transistor SMD Code		A
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	6V
Drain Current (Maximum)	ID	0.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.7Ohm
Power Dissipation (Maximum)	PD	0.25W
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		0.9V

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