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RU80N15R MOSFET Transistor

The RU80N15R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU80N15R transistor as follows.

Circuit diagram symbol of the RU80N15R transistor

RU80N15R Transistor Specification

Transistor Code RU80N15R
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.036Ohm
Power Dissipation (Maximum) PD 176W
Drain-Source Capacitance 550pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 32nS
Gate-Threshold Voltage (Maximum) 4V

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