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RU60120R MOSFET Transistor

The RU60120R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU60120R transistor as follows.

Circuit diagram symbol of the RU60120R transistor

RU60120R Transistor Specification

Transistor Code RU60120R
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 125A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.006Ohm
Power Dissipation (Maximum) PD 188W
Drain-Source Capacitance 580pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 108nS
Gate-Threshold Voltage (Maximum) 4V

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