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MDP1923TH MOSFET Transistor

The MDP1923TH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDP1923TH transistor as follows.

Circuit diagram symbol of the MDP1923TH transistor

MDP1923TH Transistor Specification

Transistor Code MDP1923TH
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 69A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0139Ohm
Power Dissipation (Maximum) PD 139W
Drain-Source Capacitance 432pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10.1nS
Gate-Threshold Voltage (Maximum) 4V

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