RU1Z120R MOSFET Transistor

The RU1Z120R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1Z120R transistor as follows.

RU1Z120R Transistor Specification

Transistor Code		RU1Z120R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.015Ohm
Power Dissipation (Maximum)	PD	375W
Drain-Source Capacitance		1010pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		98nS
Gate-Threshold Voltage (Maximum)		4.5V

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