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IPP037N08N3GE8181 MOSFET Transistor

The IPP037N08N3GE8181 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP037N08N3GE8181 transistor as follows.

Circuit diagram symbol of the IPP037N08N3GE8181 transistor

IPP037N08N3GE8181 Transistor Specification

Transistor Code IPP037N08N3GE8181
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Transistor SMD Code 037N08N
Drain-Source Voltage (Maximum) VDS 80V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 100A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0035Ohm
Power Dissipation (Maximum) PD 214W
Drain-Source Capacitance 1640pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 79nS
Gate-Threshold Voltage (Maximum) 3.5V
Total Gate Charge 117nC

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