RU1HP60R MOSFET Transistor

The RU1HP60R is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU1HP60R transistor as follows.

RU1HP60R Transistor Specification

Transistor Code		RU1HP60R
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	188W
Drain-Source Capacitance		615pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		83nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		164nC

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