AOT10N65 MOSFET Transistor

The AOT10N65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOT10N65 transistor as follows.

AOT10N65 Transistor Specification

Transistor Code		AOT10N65
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		118pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		61nS
Gate-Threshold Voltage (Maximum)		4.5V

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