RTQ020N05 MOSFET Transistor

The RTQ020N05 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RTQ020N05 transistor as follows.

RTQ020N05 Transistor Specification

Transistor Code		RTQ020N05
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT6
Drain-Source Voltage (Maximum)	VDS	45V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.14Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS

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