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QS6M4 MOSFET Transistor

The QS6M4 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QS6M4 transistor as follows.

Circuit diagram symbol of the QS6M4 transistor

QS6M4 Transistor Specification

Transistor Code QS6M4
Transistor Type MOSFET
Control Channel Type NP-Channel
Package TSMT6
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 1.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.23Ohm
Power Dissipation (Maximum) PD 0.9W
Drain-Source Capacitance 25pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 18nS
Gate-Threshold Voltage (Maximum) 1.6V

QS6M4 MOSFET Transistor Overview

Key Electrical Characteristics of the QS6M4 MOSFET

Followings are the key electrical characteristics of the QS6M4 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in QS6M4 MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the QS6M4 MOSFET transistor is 12V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the QS6M4 MOSFET transistor is 1.5A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of QS6M4 MOSFET transistor when the transistor is fully turned on is 0.23 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the QS6M4 MOSFET transistor can comfortably transfer into heat without breaking is 0.9W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the QS6M4 MOSFET transistor is 25pF. This value influences to the switching speed of the QS6M4 MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the QS6M4 MOSFET transistor is switched on is 18nS. This is the rate at which QS6M4 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the QS6M4 MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of QS6M4 MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the QS6M4 MOSFET transistor. You can download the official QS6M4 MOSFET transistor datasheet to get more infromation about this transistor.

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