RJK5015DPM MOSFET Transistor

The RJK5015DPM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK5015DPM transistor as follows.

RJK5015DPM Transistor Specification

Transistor Code		RJK5015DPM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PFM
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.24Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		270pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		59nS
Total Gate Charge		66nC

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