RJK2009DPM MOSFET Transistor

The RJK2009DPM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK2009DPM transistor as follows.

RJK2009DPM Transistor Specification

Transistor Code		RJK2009DPM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PFM
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.029Ohm
Power Dissipation (Maximum)	PD	60W
Total Gate Charge		72nC

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