RJK5002DPD MOSFET Transistor

The RJK5002DPD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK5002DPD transistor as follows.

RJK5002DPD Transistor Specification

Transistor Code		RJK5002DPD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MP-3A
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		21pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Total Gate Charge		6.7nC

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