FX6ASJ-2 MOSFET Transistor

The FX6ASJ-2 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FX6ASJ-2 transistor as follows.

FX6ASJ-2 Transistor Specification

Transistor Code		FX6ASJ-2
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MP-3A
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.58Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		108pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		2.3V

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