QM6208V MOSFET Transistor

The QM6208V is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM6208V transistor as follows.

QM6208V Transistor Specification

Transistor Code		QM6208V
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOP6
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		38pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		23.8nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		5nC

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