QM3020P MOSFET Transistor

The QM3020P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3020P transistor as follows.

QM3020P Transistor Specification

Transistor Code		QM3020P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	290A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0018Ohm
Power Dissipation (Maximum)	PD	260W
Drain-Source Capacitance		3038pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		258.6nC

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