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TMP8N80 MOSFET Transistor

The TMP8N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMP8N80 transistor as follows.

Circuit diagram symbol of the TMP8N80 transistor

TMP8N80 Transistor Specification

Transistor Code TMP8N80
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.4Ohm
Power Dissipation (Maximum) PD 250W
Drain-Source Capacitance 146pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 30nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 46nC

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